Group IV alloys (GeSnSiC) are the key materials for developing Si photonics and electronics. These alloys have the potential to be used in high mobility MOSFETs, as well as alloys that transit from the indirect bandgap into direct bandgap for photonic application. In fact, there is a great interest for a Si monolithic solution that will allow both CMOS and photonic components to be integrated on a chip.
Epiluvac provides a unique technique for growing single-crystalline GeSnSiC alloys in a wide range of growth temperatures for both selective and non-selective growth.
By applying advanced strain engineering methods, we are able to grow (biaxial or uniaxial) tensile and compressive strain layers as well as strain-free GeSnSiC layers.
Sepir 1500 is a RPCVD reactor that operates as low as 20 Torr using Si3H8 (Si2H6 or SiH4), Ge2H6 (or GeH4), SnCl4 and SiH3CH3 as Si, Ge, Sn and C precursors.
A wide range of p- and n-type doping levels in epi-layers can be obtained by using B2H6 and PH3 precursors.
To facilitate a jump-start using the new reactor, Epiluvac can provide extensive support with a standard recipe, further development of the process and characterization of the grown material.
Please contact Epiluvac for relevant articles about GeSnSiC.
Epiluvac staff have decades of experience in designing CVD systems to meet specific customer needs. In fact, for our staff, custom design equals standard design. We can build systems for UHV applications, extreme temperatures (2900 K), complex gas mixtures, or low-cost lab systems.
All systems are made to order but with established building blocks. Therefore, all customer expectations for a short delivery time and a high-value product will be met. We deliver each system complete with reactor module, gas delivery system, process control, safety system, installation, and commissioning. Each system is tested extensively before shipment, and installation also includes all necessary customer training for operation and maintenance.
The rapid development of graphene continues along many different paths. Producing graphene from a SiC substrate is a promising technique for obtaining graphene layers of high quality.
To facilitate this technique, Epiluvac has developed a state-of-the-art, high-temperature furnace with all the features needed to run a computer controlled, well-defined process on a regular basis.
The silicon carbide CVD system that provides the best possible material is the EPI 1000-C hot-wall reactor. The footprint is small, and it is the obvious choice for demanding research work and small-scale production. The gas mixing system is fully flexible and can be updated and extended at a later stage to meet new requirements.
The dedicated nitride reactor, capable of temperatures up to 1450 °C. The rapidly growing interest for new nitride materials, such as GaN, AlGaN and InAlGaN, has prompted the development of a completely new reactor type. Further details about this reactor type will soon be released.
Copyright: Lund University
Given today’s ever-changing focus in materials research, new requirements for research systems are our daily business.
In close cooperation with our customers, we develop the reactor for the specific needs of the desired material. That development is based on decades of reactor design experience.
New reactor designs are developed quickly and efficiently with our 3D CAD tools. With the close cooperation of our experienced sub-suppliers, new ideas can be realized in a short time.