Hot-wall CVD for highest possible uniformity
In a hot-wall CVD system the reactor chamber is heated by an external power source and the substrate is heated by radiation from the heated chamber walls. The hot-wall principle offers several advantages, like excellent substrate temperature uniformity and thus uniform coating thickness. Epiluvac CVD reactors are designed to fully utilize the strengths of the hot-wall principle. The excellent performance has been demonstrated in numerous installations worldwide, especially for Silicon Carbide (SiC) epitaxy where the the company’s engineering team were pioneers in the 1990’s.
Mastering the challenges
There are commonly known challenges with hot-wall reactors. For example there is a risk of deposition on the reactor wall and possible particle contamination requiring frequent cleaning. By innovations relating to the design of the reactor chamber and gas injection system Epiluvac has managed to reduce or even eliminate such problems.
Innovative reactor chamber designs
Patented cross-flow design for concentrated growth
- Gas flow concentrated to the substrate which avoids depletion of the precursor gases.
- Minimized risk of deposition on the chamber wall and other system parts.
New type of gas injection system for best possible uniformity
- Enables fully laminar flow and uniform substrate temperature
Individually controllable heating zones
- For cell temperature profiling
Automatic hot wafer loader
- Pre-heating, transfer into the reactor chamber and cool-down; all handled by an integrated robot
- For shortest possible cycle time and high throughput
- Reduces particle down-fall