Our 200 mm CVD epitaxy systems for Silicon Carbide and Gallium Nitride got a lot of attention. This is the new generation of CVD systems, designed from the beginning for 150 and 200 mm wafers. Thanks to all of you who stopped and watched the video, showing the automated wafer handler and the hot-wall process chamber.
The unique heater design, enabling a very precise temperature control of the wafer, and the patented gas injector was the starting point for many interesting discussions.
ECSCRM brings together scientists, experts, engineers, and students from all over the world to meet and discuss silicon carbide (SiC) and other wide bandgap (WBG) semiconductors.
(Updated October 30)