Epitaxy

CVD epitaxy reactors for SiC and GaN

SiC epitaxy system – Epiluvac EPI 1000-C

• Hot-wall CVD for excellent uniformity. • Up to 150 mm substrate diameter • Single-wafer and manual loading. • Well suited for R&D.

SiC epitaxy system – Epiluvac ER3-C1

• Up to 200 mm (8”) wafer diameter. • Excellent uniformity through hot-wall topology, uniform gas flow and cell temperature profiling. • Up to 1800 °C • Quartz-free and ready for chlorinated processes. • Hot wafer loading/unloading in a clean inert atmosphere minimizes particle contamination. • Modular design with cluster configuration and several automation options. • Suitable for low/medium volume production and R&D.

GaN epitaxy system – Epiluvac ER3-N1

• The GaN version of the above ER3-C1 system.

Epiluvac is a privately held Swedish company founded 2013 by a team of engineers with decades of research and development experience from the CVD reactor field and especially hot-wall CVD epitaxy equipment for Silicon Carbide. Epiluvac provides standard as well as customized reactor solutions and a wide range of service and maintenance packages. Recent customized solutions include reactor designs for graphene and nanowire manufacturing among others.